提供者：上海屹持光电技术有限公司 发布时间：2023/4/12 14:01:28 阅读次数：2694次 进入该公司店铺
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| For the past 15 years single crystal sapphire has been at the cutting edge of semiconductor technology. A combination of unique chemical, physical, optical ａnd mechanical properties make sapphire the best choice for a broad spectrum of laboratory ａnd industrial applications. |
| • Chemical resistance. Sapphire is highly inert ａnd resistant to attack in most process environments including hydrofluoric acid ａnd the fluorine plasma applications commonly found in semiconductor wafer processing (NF3, CF4). • Mechanical properties. Sapphire is characterized by high toughness ａnd solidity, ａnd demonstrates excellent resistance in different environments ranging from cryogenic to over 1500°C. Due to this characteristics combined with chemical stability sapphire is widely used in medicine: endoscope ａnd probe lenses, needles for thermal treatment of tumors, scalpels etc. • Electrical properties. Sapphire provides a high, stable dielectric constant with the electrical insulation required for LED, RF ａnd microwave applications. • Optical transmission. Sapphire is characterized by high transmission in the range of UV to near IR. Given the chemical stability, high temperature ａnd high pressure resistance sapphire is the preferred choice for window / viewport applications in high performance vacuum systems, furnaces, deep sea cameras, fire alarm systems etc. • Surface properties. Sapphire can be polished to very high flatness ａnd smoothness for substrate applications ａnd precision mechanical components. • Thermal properties. With a melting point over 2000°C, ａnd high thermal conductivity sapphire is often used in many harsh process environments. • Wear properties. With high hardness ａnd transparency, sapphire is used for scratch proof windows in high wear applications ａnd for precision mechanical components. |
Basic properties |
| Crystallline structureHexagonal a = b = 4.77 Å c = 13.04Melting point:2040°СThermal expansion index:6,7 х 10-6 С parallel to С-axisConductivity46.06 W/m °K at 0°CSpecific resistivity:5,0 х 10-6 С perpendicular to С-axisDielectric Constantaverage 11.5 (parallel to C-axis)Density3,98 g/ cm3Compressive Strength2 GPaYoung Modulus3.6x104 – 4.4x104Flexural Strength35-39 daN/ mm2Tensile Strength~400 MPa (at approx. 25°C)Poisson’s Ratio0.28-0.33Hardness9 mohs 1800 Knoop parallel to c-axis 2200 Knoop perpendicular to c-axisRefraction IndexNo: 1.768 (c-axis) Ne: 1.760 (c-axis)Birefringence(No-Ne) 0.008 |
Sapphire Transmission |
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Products |
Sapphire ingots for LED, RF ａnd optical applications |
| Diameter/Width5-220 mmThickness/Length25 – 500 mmOrientationC (0001), M (1010), A (1120), R (1102)Surface qualityAs-cut, fine-groundEnds/Edge QualityAs-cut, fine-ground |
Sapphire tubes, capillaries ａnd nozzles for mechanical ａnd optical applications: laboratory equipment, semiconductor equipment, optical systems (CVD, plazma reactors, UV treatment of substances, protective sheaths for thermocouples etc.) |
| Inner Diameter0.6 - 30 mmOuter Diameter2 - 50 mmLengthUp to 600 mmOrientationRandom, CSurface qualityAs-grown, fine-ground, 80/50 per MIL-0-13830Ends/Edge QualityAs-cut |
Sapphire substrates for LED ａnd RF applications |
| Diameter50.8 – 160mmThickness0.3 – 5 mmOrientationC (0001), M (1010), A (1120), R (1102)Surface qualityEPI-polished (Ra<0.5 nm) suitable for epitaxial growth |
Sapphire windows ａnd viewports for UV, visible ａnd near-IR applications (semiconductor equipment, scanners, laser systems, fire alarm systems, deep sea cameras) |
| Diameter1-240 mmThickness>/=0.15 mmOrientationRandom, M (1010), A (1120), R (1102), C (0001)Flatness4 λ per inchParallelism<0.5 - 3 angular minutesChamfer< /=0.1 - 0.5 mm x 45+/-5 degSurface quality80/50, 60/40, 40/20, 20/10. or 10/5 per MIL-0-13830 |
Sapphire rods ａnd blanks for LED, RF, optical, mechanical ａnd medical applications |
| Diameter1-300 mmThickness>/=0.15 mmOrientationC (0001), M (1010), A (1120), R (1102)Surface qualityAs-cut, fine-ground |
| Blanks Windows Substrate Tubes |
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