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sinton instruments+suns-Voc测试仪
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更新日期：2026/3/19 16:31:43
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详细内容
suns-Voc测试仪
如何利用Suns-Voc进行浆料与烧结技术优化
少子寿命，PN结的好坏，表面及体内的复合情况,材料质量、钝化效果等" b3 X _6 K$ b1 u" ~- I. E1 V; A
Life time,Pseudo-EFF, Pseudo-Voc, Pseudo-FF, Ideality factor
对比该曲线与最后测定的I至V曲线，可以准确测量出电池的串联电阻。
Suns-Voc系统特征
·晶元测定的温控为25°C
·电压探针的高精准度
·兼容磁性探针
·配备全套浓度补正滤色片的疝气灯
·后支柱可调节高度，准确调节亮度
·适用标准I至V曲线图及Suns-Voc曲线图
·不受串联电阻的影响，测定晶片特征
Suns-Voc Applications
By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present), the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage, so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel
