Ultra-Flat SiNx Coated Substrates

The Ultra-Flat SiNx Substrates consist of ultra-flat silicon wafers coated with 200nm of amorphous nonstoichiometric ultra low-stress silicon nitride, similar to our silicon nitride grids. The ultra-flat SiNx substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" Wafer Carrier; the diced pieces are shipped in a Gel-Pak^® Box.

The wafers are stealth diced, a special clean dicing process which produces debris-free substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiNx substrates:

• Material: CZ Virgin Silicon

• Wafer Grade: Prime

• Diameter: 150mm

• Orientation: <100>

• Type/Dopant: P/Boron

• Resistivity: 10-20 Ohm-cm

• Thickness: 675 +/- 25µm

• TTV: ≤2µm

• Site Flatness: ≤1µm

• Warp: ≤30µm

• Bow: ≤20µm

• Front Surface: Polished

• Back Surface: Etched

• Flat: 1 per SEMI Standard

• 2000A +/- 100A SiNx