Experimental
OFET device specifications
This table shows details of the substrates used in this fabrication routine.
| Substrates | Ossila silicon/silicon dioxide substrates (S146) |
|---|
| Substrate size | 20 x 15 mm |
|---|
| Gate conductivity | 1-30 Ω·cm (Boron doped) |
|---|
| Silicon oxide thickness | 300 nm |
|---|
| Device per substrates | Five, common gate |
|---|
| Channel length | 30 µm |
|---|
| Channel width | 1000 µm |
|---|
| OFET architecture | Top contact, bottom gate |
|---|
| Source-Drain patterning | Thermal evaporation using Source-Drain Deposition Mask for Low Density OFETs |
|---|